On the mechanism of piezoresistance in nanocrystalline graphite

• Sandeep Kumar,
• Simone Dehm and
• Ralph Krupke

Beilstein J. Nanotechnol. 2024, 15, 376–384, doi:10.3762/bjnano.15.34

• similar to the resistance vs strain curve in this work. A deviation from the linear behavior into a plateau is observed at larger strain, owing to plastic deformations of the NCG film. However, a sharp increase in stress after the plateau region is not observed. This can be understood by stress relaxation

The effect of heat treatment on the morphology and mobility of Au nanoparticles

• Sven Oras,
• Sergei Vlassov,
• Simon Vigonski,
• Boris Polyakov,
• Mikk Antsov,
• Vahur Zadin,
• Rünno Lõhmus and
• Karine Mougin

Beilstein J. Nanotechnol. 2020, 11, 61–67, doi:10.3762/bjnano.11.6

• twinned NPs and the tendency of such particles to seek mechanisms of stress relaxation [25]. The rearrangement of surface atoms into more rounded outer geometries can be a way of energy minimization while preserving the five-fold twinned inner structure of the NP, as shown in Figure 3 for a Au NP heated

Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy

• Alexey D. Bolshakov,
• Alexey M. Mozharov,
• Georgiy A. Sapunov,
• Igor V. Shtrom,
• Nickolay V. Sibirev,
• Vladimir V. Fedorov,
• Evgeniy V. Ubyivovk,
• Maria Tchernycheva,
• George E. Cirlin and
• Ivan S. Mukhin

Beilstein J. Nanotechnol. 2018, 9, 146–154, doi:10.3762/bjnano.9.17

• defect-free structures on highly mismatched substrates, e.g., GaN NWs on Si [7][8]. NWs usually possess high crystal quality due to the effective mechanical stress relaxation at a distance of about one NW base diameter from the substrate. Nanowires synthesized on Si are very promising nanostructures in

• threading dislocations [32][33][34] followed by transition to three-dimensional growth of nanoislands [33][35]. The phenomenon of the Si solubility limit elevation in GaN NWs is usually explained again through effective stress relaxation due to the large surface area of these nanostructures. This work is

Material property analytical relations for the case of an AFM probe tapping a viscoelastic surface containing multiple characteristic times

• Enrique A. López-Guerra and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2017, 8, 2230–2244, doi:10.3762/bjnano.8.223

• input are related through a material transfer function, which contains the viscoelastic parameters. Standard inputs are typically strain and stress step functions (in the case of stress relaxation and creep experiments, respectively) or harmonic excitations (in the case of DMA). Following the spirit of

• : Retransforming Equation 27 gives: The term in brackets is the stress–relaxation function (stress response to a unit step strain [8]) shifted by the time t′, (G(t − t′)). For further details on the stress relaxation of the Generalized Maxwell model see Equation S5 in Supporting Information File 1. Combining

Substrate and Mg doping effects in GaAs nanowires

• Perumal Kannappan,
• Nabiha Ben Sedrine,
• Jennifer P. Teixeira,
• Maria R. Soares,
• Bruno P. Falcão,
• Maria R. Correia,
• Nestor Cifuentes,
• Emilson R. Viana,
• Marcus V. B. Moreira,
• Geraldo M. Ribeiro,
• Alfredo G. de Oliveira,
• Juan C. González and
• Joaquim P. Leitão

Beilstein J. Nanotechnol. 2017, 8, 2126–2138, doi:10.3762/bjnano.8.212

• of particular interest due to the possible integration with Si technology [42][43]. The free lateral surfaces of a nanowire allow efficient lateral stress relaxation [44], which is important to adjust lattice mismatched materials without the formation of a high density of structural defects [42][44

Process-specific mechanisms of vertically oriented graphene growth in plasmas

• Subrata Ghosh,
• Shyamal R. Polaki,
• Niranjan Kumar,
• Sankarakumar Amirthapandian,
• Mohamed Kamruddin and
• Kostya (Ken) Ostrikov

Beilstein J. Nanotechnol. 2017, 8, 1658–1670, doi:10.3762/bjnano.8.166

• growth is initiated with a buffer layer consisting of amorphous carbon and carbon onion structures, nanographitic (NG) island formation, or through carbide formation. The factors responsible for the vertical growth are stress relaxation through NG islands, inherent electric field and thermophoretic force

Annealing-induced recovery of indents in thin Au(Fe) bilayer films

• Anna Kosinova,
• Ruth Schwaiger,
• Leonid Klinger and
• Eugen Rabkin

Beilstein J. Nanotechnol. 2016, 7, 2088–2099, doi:10.3762/bjnano.7.199

• of slow stress relaxation in the as-deposited Au(Fe) bilayers at room temperature. After the first annealing for 10 min, the hillocks disappeared. AFM line profiles were used to determine the indent depth before and after annealing. The average depths of the as-produced indents were 18 and 25 nm for

Nanoscale effects in the characterization of viscoelastic materials with atomic force microscopy: coupling of a quasi-three-dimensional standard linear solid model with in-plane surface interactions

• Santiago D. Solares

Beilstein J. Nanotechnol. 2016, 7, 554–571, doi:10.3762/bjnano.7.49

• behaviors, namely creep and stress relaxation [13][14][18][25]. There exist simpler models [13], such as the Maxwell model by itself (described above) and the Kelvin–Voigt model, which consists of a linear spring in parallel with a linear damper (this model is used in CR-AFM [3]). However, in the former

• model, the surface is unable to restore itself to its original state (it remains permanently deformed upon the application of a stress), and the latter model does not exhibit stress relaxation. The SLS model was previously used in AFM simulations and its general properties and response have been

• with respect to creep and stress relaxation. However, in its previous form [22], it lacks interaction between adjacent area elements, and thus, it does not produce a physically correct shape for the surface profiles that emerge upon indentation by the AFM tip. This is because the only area elements

Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method

• Mikalai V. Malashchonak,
• Alexander V. Mazanik,
• Olga V. Korolik,
• Еugene А. Streltsov and
• Anatoly I. Kulak

Beilstein J. Nanotechnol. 2015, 6, 2252–2262, doi:10.3762/bjnano.6.231

• of N due to the stress relaxation. The CdS LO band width for In2O3/CdS films is larger than for TiO2/CdS, which corresponds with the results of the photoelectrochemical measurements demonstrating a larger Urbach energy for the nanoparticles synthesized on the surface of indium oxide. The spectral

A simple and efficient quasi 3-dimensional viscoelastic model and software for simulation of tapping-mode atomic force microscopy

• Santiago D. Solares

Beilstein J. Nanotechnol. 2015, 6, 2233–2241, doi:10.3762/bjnano.6.229

• fundamental viscoelastic behaviors, namely stress relaxation and creep. However, this simple model does not reflect the correct curvature in the repulsive portion of the force curve, so its application in the quantitative interpretation of AFM experiments is relatively limited. In the proposed Q3D model the

• analytical models cannot reproduce stress relaxation and creep [10][11]. Within AFM, this means that when the tip and sample are held in contact at a fixed relative position, the model must exhibit a time-dependent reduction in the stress (stress relaxation). Additionally, when the tip and sample are held in

• possible, in parallel with the linear spring k1 allows the model to exhibit the desired viscoelastic behaviors, namely stress relaxation, creep, and also the ability to fully but gradually (not instantaneously) recover when all forces are removed. Additional details on stress relaxation and creep

Modeling viscoelasticity through spring–dashpot models in intermittent-contact atomic force microscopy

• Enrique A. López-Guerra and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2014, 5, 2149–2163, doi:10.3762/bjnano.5.224

• , including creep, stress relaxation and the presence of multiple relaxation times. Some of the models examined have been previously used in AFM simulation, but their applicability to different situations has not yet been examined in detail. The behavior of each model is analyzed here in terms of force

• deformation frequencies (descriptions of tip–sample model behaviors in the context of multifrequency AFM require detailed studies and are beyond the scope of this work). Keywords: atomic force microscopy; creep; dissipated energy; multifrequency; stress relaxation; tapping mode; viscoelasticity

• characterization with AFM. Results and Discussion Model descriptions Linear Maxwell model The Linear Maxwell model is one of the simplest spring–dashpot sets. It consists of a spring arranged in series with a dashpot (Figure 1a). This model is known for successfully describing stress relaxation (time-dependent

Probing viscoelastic surfaces with bimodal tapping-mode atomic force microscopy: Underlying physics and observables for a standard linear solid model

• Santiago D. Solares

Beilstein J. Nanotechnol. 2014, 5, 1649–1663, doi:10.3762/bjnano.5.176

• single-mode and bimodal atomic force microscopy (AFM) with particular focus on the viscoelastic interactions occurring during tip–sample impact. The surface is modeled by using a standard linear solid model, which is the simplest system that can reproduce creep compliance and stress relaxation, which are

• applicable and useful for certain types of samples [9]. The purpose of this paper is to explore computationally the expected physics and the response of the observables for a viscoelastic contact model that exhibits both creep compliance and stress relaxation. Thus, the standard linear solid model (SLS [10

• qualitative behavior for creep compliance and stress relaxation, its study can highlight the range of open issues that remain in the development of surface viscoelasticity measurement methods based on intermittent-contact AFM. This paper begins with a background section providing a very brief description of

Multi-frequency tapping-mode atomic force microscopy beyond three eigenmodes in ambient air

• Santiago D. Solares,
• Sangmin An and
• Christian J. Long

Beilstein J. Nanotechnol. 2014, 5, 1637–1648, doi:10.3762/bjnano.5.175

• repulsive tip–sample forces were accounted for through a standard linear solid (SLS) model [9] which exhibits both stress relaxation and creep (see Figure 10 and notice the variety of force and surface trajectories for the single and multiple impacts observed in multimodal tapping-mode imaging [20]). Long

Formation of Cu_xAu_1−x phases by cold homogenization of Au/Cu nanocrystalline thin films

• Alona Tynkova,
• Gabor L. Katona,
• Gabor A. Langer,
• Sergey I. Sidorenko,
• Svetlana M. Voloshko and
• Dezso L. Beke

Beilstein J. Nanotechnol. 2014, 5, 1491–1500, doi:10.3762/bjnano.5.162

• increased. On the other hand during DIGM the composition behind the moving boundary can be about several tenth of an atomic fraction, i.e., the homogenization of a thin film with small grain size is also possible by this mechanism. During DIR, which is another manifestation of the stress relaxation caused

Dynamic nanoindentation by instrumented nanoindentation and force microscopy: a comparative review

• Sidney R. Cohen and
• Estelle Kalfon-Cohen

Beilstein J. Nanotechnol. 2013, 4, 815–833, doi:10.3762/bjnano.4.93

• /stress and the change in strain required to maintain this situation is monitored. stress relaxation where the indenter is brought to a given deformation/strain and the stress required to maintain it is monitored. periodic variation of stress, usually sinusoidal, at a given frequency f, equivalent to a

• Maxwell model is more appropriate to a viscoelastic fluid and the Voigt model a viscoelastic solid. In comparison, these models yield the same results, except that the Voigt model cannot describe a stress relaxation experiment because the dashpot would develop a singularity in force with step change of

• strain. To illustrate these differences, for load control as it is used in INI creep relaxation, the Voigt model, Figure 4a, can be applied, but for nanoindentation stress relaxation as it is conveniently done in AFM, the Maxwell model (Figure 4b) is more appropriate. Whereas these simplistic models give

Towards 4-dimensional atomic force spectroscopy using the spectral inversion method

• Jeffrey C. Williams and
• Santiago D. Solares

Beilstein J. Nanotechnol. 2013, 4, 87–93, doi:10.3762/bjnano.4.10

• well suited to study stress relaxation. (While this paper is not intended to be a study of surface viscoelasticity, we briefly illustrate the use of slightly more elaborate surface models.) Instead, one could, for example, use the standard linear solid (SLS) model, which is a combination of the Maxwell

• and Kelvin–Voigt models. In the SLS configuration a Maxwell element is connected in parallel with a second spring (this setup is also known as the Zener model). The SLS approximation provides the simplest form of a linear viscoelastic approximation that can reproduce both stress relaxation and creep

Growth behaviour and mechanical properties of PLL/HA multilayer films studied by AFM

• Cagri Üzüm,
• Johannes Hellwig,
• Narayanan Madaboosi,
• Dmitry Volodkin and
• Regine von Klitzing

Beilstein J. Nanotechnol. 2012, 3, 778–788, doi:10.3762/bjnano.3.87

• . It was found that the film thickness increases linearly with the bilayer number n, ranging between 400 and 7500 nm for n = 12 and 96, respectively. The apparent Young’s modulus E ranges between 15 and 40 kPa and does not depend on the indenter size or the film bilayer number n. Stress relaxation

• measurements show that PLL/HA films have a viscoelastic behaviour, regardless of their thickness. If indentation is performed several times at the same lateral position on the film, a viscous/plastic deformation takes place. Keywords: atomic force microscopy; polyelectrolyte multilayers; stress relaxation

• measurement and data-handling procedures. The dependence of E on the indentation velocity clearly indicates a viscoelastic film character [23][41] as will be further discussed below in terms of stress-relaxation measurements. In fact, due to the viscoelastic liquid character of the PLL/HA films, their